MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with
frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
Driver Application ? 900 MHz
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
=
320 mA, Pout
= 4.0 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
920 MHz
18.9
18.9
--49.6
940 MHz
19.1
19.5
--50.1
960 MHz
19.1
19.9
--48.8
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
?
Typical Pout
@ 1 dB Compression Point
?
42 Watts CW
Driver Application ? 700 MHz
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
=
320 mA, Pout
= 4.0 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
728 MHz
19.9
18.7
--49.9
748 MHz
20.1
19.1
--50.0
768 MHz
20.0
19.5
--49.9
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
Designed for Digital Predistortion Error Correction Systems
?
Optimized for Doherty Applications
?
225°C Capable Plastic Package
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Document Number: MRF8P9040N
Rev. 1, 10/2010
Freescale Semiconductor
Technical Data
728--960 MHz, 4.0 W AVG., 28 V
CDMA, W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P9040NR1
MRF8P9040GNR1
MRF8P9040NBR1
(Top View)
32RFoutA/VDSA
Figure 1. Pin Connections
41RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Note: Exposed backside of the package is
the source terminal for the transistors.
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF8P9040NBR1
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
PLASTIC
MRF8P9040NR1
CASE 1487--05, STYLE 1
T O -- 2 7 0 W B -- 4 G U L L
PLASTIC
MRF8P9040GNR1
?
Freescale Semiconductor, Inc., 2010.
All rights reserved.
相关PDF资料
MRF8P9300HSR6 FET RF N-CH 960MHZ 70V NI-1230HS
MRF8S18120HR5 MOSFET RF N-CH 120W NI-780
MRF8S18260HSR6 MOSFET RF N-CH 260W NI1230S-8
MRF8S19140HSR3 FET RF N-CH 1960MHZ 28V NI780HS
MRF8S19260HSR6 FET RF N-CH 1.9GHZ 30V NI1230S-8
MRF8S21120HSR3 FET RF N-CH 2.1GHZ 28V NI780HS
MRF8S21140HSR3 FET RF N-CH 2GHZ 28V NI780S
MRF8S21200HSR6 MOSFET RF N-CH 48W NI-1230HS
相关代理商/技术参数
MRF8P9040NBR1 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9040NR1 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9210NR3 功能描述:射频MOSFET电源晶体管 HV8 900MHz 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9300HR5 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9300HR6 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9300HR6_10 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P9300HSR5 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9300HSR6 功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray